general description the AAT7361 is a low threshold dual p-channel mosfet designed for the battery, cell phone, and pda markets. using analogictech's ultra-high- density mosfet process and space-saving, small-outline, j-lead package, performance superi- or to that normally found in a larger footprint has been squeezed into the footprint of a tsopjw8 package. applications ? battery packs ? battery-powered portable equipment ? cellular and cordless telephones features ? drain-source voltage (max): -20v ? continuous drain current 1 (max) -3.0a @ 25c ? low on-resistance: ? 100m ? @ v gs = -4.5v ? 175m ? @ v gs = -2.5v dual tsopjw-8 package d1 d1 d2 d2 s1 g1 s2 g2 top view 1234 8765 AAT7361 20v p-channel power mosfet absolute maximum ratings t a = 25c, unless otherwise noted. thermal characteristics 1 symbol description typ max units r ja junction-to-ambient steady state, one fet on 124 155 c/w r ja2 junction-to-ambient t<5 seconds 74 90 c/w r jf junction-to-foot 66 80 c/w p d maximum power dissipation t a = 25c 1.4 w t a = 70c 0.9 symbol description value units v ds drain-source voltage -20 v v gs gate-source voltage 12 i d continuous drain current @ t j = 150c 1 t a = 25c 3.0 t a = 70c 2.4 a i dm pulsed drain current 2 9 i s continuous source current (source-drain diode) 1 -1.0 t j operating junction temperature range -55 to 150 c t stg storage temperature range -55 to 150 c 7361.2005.04.1.0 1 1. based on thermal dissipation from junction to ambient while mounted on a 1" x 1" pcb with optimized layout. a 5-second puls e on a 1" x 1" pcb approximates testing a device mounted on a large multi-layer pcb as in most applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. r jf is guaranteed by design; however, r ca is determined by the pcb design. actual maximum continuous current is limited by the application's design. 2. pulse test: pulse width = 300s.
electrical characteristics t j = 25c, unless otherwise noted. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = -250a -20 v r ds(on) drain-source on-resistance 1 v gs = -4.5v, i d = -3.0a 80 100 m ? v gs = -2.5v, i d = -2.3a 140 175 i d(on) on-state drain current 1 v gs = -4.5v, v ds = -5v (pulsed) -9 a v gs(th) gate threshold voltage v gs = v ds , i d = -250a -0.6 v i gss gate-body leakage current v gs = 12v, v ds = 0v 100 na i dss drain source leakage current v gs = 0v, v ds = -20v -1 a v gs = 0v, v ds = -16v, t j = 70c 2 -5 g fs forward transconductance 1 v ds = -5v, i d = -3.0a 5 s dynamic characteristics 2 q g total gate charge v ds = -10v, r d = 3.3 ? , v gs = -4.5v 6 q gs gate-source charge v ds = -10v, r d = 3.3 ? , v gs = -4.5v 1.3 nc q gd gate-drain charge v ds = -10v, r d = 3.3 ? , v gs = -4.5v 1.7 t d(on) turn-on delay v ds = -10v, r d = 3.3 ? , v gs = -4.5v, r g = 6 ? 7 t r turn-on rise time v ds = -10v, r d = 3.3 ? , v gs = -4.5v, r g = 6 ? 13 ns t d(off) turn-off delay v ds = -10v, r d = 3.3 ? , v gs = -4.5v, r g = 6 ? 15 t f turn-off fall time v ds = -10v, r d = 3.3 ? , v gs = -4.5v, r g = 6 ? 20 source-drain diode characteristics v sd source-drain forward voltage 1 v gs = 0, i s = -3.0a -1.3 v i s continuous diode current 3 -1.0 a AAT7361 20v p-channel power mosfet 2 7361.2005.04.1.0 1. pulse test: pulse width = 300s. 2. guaranteed by design. not subject to production testing. 3. based on thermal dissipation from junction to ambient while mounted on a 1" x 1" pcb with optimized layout. a 5-second puls e on a 1" x 1" pcb approximates testing a device mounted on a large multi-layer pcb as in most applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. r jf is guaranteed by design; however, r ca is determined by the pcb design. actual maximum continuous current is limited by the application's design.
typical characteristics t j = 25oc, unless otherwise noted. threshold voltage -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 v gs(th) variance (v) i d = 250 a -50 -25 0 25 50 75 100 125 150 t j (oc) -50 -25 0 25 50 75 100 125 150 t j ( c) normalized r ds(on) on-resistance vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v gs = 4.5v i d = 3a on-resistance vs. gate-to-source voltage 012345 v gs (v) 0 0.08 0.16 0.24 0.32 0.4 r ds(on) ( ) i d = 3a i d (a) r ds(on) ( ) on-resistance vs. drain current 0 0.1 0.2 0.3 0 1.5 3 4.5 6 7.5 9 v gs = 4.5 v v gs = 2.5 v transfer characteristics v gs (v) i d (a) v d = v g 0 1.5 3 4.5 6 7.5 9 012345 125 c 25 c -55 c v ds (v) i ds (a) 0 1.5 3 4.5 6 7.5 9 0 0.5 1 1.5 2 2.5 1.5v 2v 2.5v 3.5v 3v 4v 4.5v 5v output characteristics 3 AAT7361 20v p-channel power mosfet 7361.2005.04.1.0 3
typical characteristics t j = 25oc, unless otherwise noted. transient thermal response, junction to ambient 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance .5 .2 .1 .02 single pulse .05 single pulse power, junction to ambient time (s) power (w) 0 5 10 15 20 25 30 35 40 45 50 0.0001 0.001 0.01 0.1 1 10 100 1000 capacitance v ds (v) capacitance (pf) c iss c rss c oss 0 100 200 300 400 500 600 700 0 5 10 15 20 v sd (v) i s (a) source-drain diode forw ard voltage 0.1 1 10 100 0 0 .2 0.4 0 .6 0.8 1 1 .2 t j = 150 c t j = 25 c gate charge q g , charge (nc) v gs (v) 0 1 2 3 4 5 02468 v d = 10v i d = 3.0a AAT7361 20v p-channel power mosfet 4 7361.2005.04.1.0
AAT7361 20v p-channel power mosfet 7361.2005.04.1.0 5 ordering information package information tsopjw-8 all dimensions in millimeters. 0.65 bsc 0.65 bsc 0.65 bsc 0.325 0.075 2.85 0.20 2.40 0.10 3.025 0.075 0.055 0.045 0.9625 0.0375 1.0175 0.0925 0.010 0.15 0.05 7 0.04 ref 0.45 0.15 2.75 0.25 package marking 1 part number (tape and reel) 2 tsopjw-8 jyxyy AAT7361its-t1 1. xyy = assembly and date code. 2. sample stock is generally held on part numbers listed in bold .
AAT7361 20v p-channel power mosfet 6 7361.2005.04.1.0 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed.
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